EXAFS measurements of metal-decorated nanocavities in Si
This contribution presents a sample preparation methodology to enable the identification, with synchrotron radiation-based analytical techniques, of the gettering sites of metallic impurities on the internal walls of implantation-induced nanocavities in Si substrates. Preliminary results for the Cu-Si and Cu-Cu bond lengths on the internal surface of the nanocavities are reported. (C) 2002 Elsevie