Fabrication and Characterization of Quantum-well Field Effect Transistor
The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. It is a multiple-layer design, n-type InGaAs and n-type InP over channel. The stack of