Current voltage characterization of high-k oxide on InGaAs substrate
Abstract Metal oxide semiconductor (MOS) capacitor was fabricated on the InGaAs substrate with Al2O3/HfO2 gate oxide. InGaAs is one of the promising candidates for advanced applications which require the lower power supply and high frequency. The high-k films (Al2O3/HfO2) were formed by atomic layer deposition (ALD) as an alternative to silicon dioxide (SiO2) to proceed the scaling of oxide to low