Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires
The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are investigated in thisthesis. The semiconductor materials are grown by metal-organic vapor phase epitaxy, yielding wire shaped crystals(nanowires) having a length of ~ 1 μm and diameter of ~ 100 nm. Nanowires are relevant for many applications,such as optical detectors, photovoltaics, light emitting diodes
