Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching
We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 mu m tall NPs functions as a "detector" in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicat