High Responsivity of InP/InAsP Nanowire Array Broadband Photodetectors Enhanced by Optical Gating
High-performance photodetectors operating in the near-infrared (0.75–1.4 μm) and short-wave infrared (1.4–3.0 μm) portion of the electromagnetic spectrum are key components in many optical systems. Here, we report on a combined experimental and theoretical study of square millimeter array infrared photodetectors comprising 3 million n+–i–n+ InP nanowires grown by MOVPE from periodically ordered Au