High Frequency InGaAs Nanowire MOSFETs
We present compact modeling, DC and RF characterization of lateral and vertical nanowire MOSFETs. Lateral tri-gate nanowire devices on InP substrates have demonstrated a maximum gm=2.95 mS/ μm at VDS=0.5 V, and fT/fmax=290/350 GHz. Vertical gate-all-around InAs wires integrated on Si substrates have demonstrated gm=1.35 mS/μm and fT/fmax=100/155 GHz. We also demonstrate a non- parabolic, ballistic