Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si(100) islands
In this paper, the Ge overgrowth of oxidized and reduced Ge/Si islands is studied. The islands were grown in a hotwall ultrahigh vacuum chemical vapour deposition reactor. The oxidation was performed in air at room temperature and the reduction in a hydrogen atmosphere at 600degreesC. After reduction, Ge was deposited at the same temperature. The results of the overgrowth show that the reduced nat