Accurate determination of the band offset between Zinc-Blende-Wurtzite GaAs
Under certain conditions, the crystal phases in III-V semiconductor nanowires can be controlled, opening up the possibility to create polytype heterostructures with atomically sharp interfaces. The focus of this thesis lies on GaAs nanowires exhibiting the wurtzite (wz) and zinc-blende (zb) crystal structure. Since controlled growth of the wz phase of GaAs has only been achieved recently, knowledg
