Morphology of ion irradiation induced nano-porous structures in Ge and Si1−xGex alloys
Crystalline Ge and Si1−xGex alloys (x = 0.83, 0.77) of (100) orientation were implanted with 140 keV Ge− ions at fluences between 5 × 1015 to 3 × 1017 ions/cm2, and at temperatures between 23 °C and 200 °C. The energy deposition of the ions leads to the formation of porous structures consisting of columnar pores separated by narrow sidewalls. Their sizes were characterized with transmission electr
