In Situ Study of Axial GaSb/GaAs Nanowire Heterostructure Formation
Combining multiple III-V materials into axial nanowire heterostructures has enabled the fabrication of custom nanowire-based devices useful for a wide range of applications. However, our ability to form axial heterostructures between arbitrary combinations of III-V compounds is impeded by a lack of information on the dynamics of the heterojunction formation process, often resulting in suboptimal h
