Ferroelectricity in nanocrystalline Hf0.5Zr0.5O2 thin films
Hafnium dioxide (HfO_2) based thin films doped with various dopants (Si, Ge, Al, Gd, Sr, Zr) have been found to exhibit ferroelectricity. These dopants were found to stabilize the III orthorhombic phase in the hafnium oxide based thin films. This characteristic enables and allows various applications ranging from Non-volatile memory, Ferroelectric Field-Effect-Transistors, to Negative Capacitance
