Charging control of InP/GaInP quantum dots by heterostructure design
Semiconductor quantum dots are often charged due to accumulation from a doped host material. Using low-temperature photoluminescence, we have studied the charging of single self-assembled InP dots in structures designed to control the electron population in a weakly n-type environment. By using designed heterostructures to position the Fermi level of the structure, not requiring electric fields or
