Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
We have successfully embedded a metal gate in-between two resonant tunneling double barrier heterostructures (RTD), thus realizing a three dimensional resonant tunneling transistor. The gate is placed 30 nm above and 100 below the two RTD's, respectively. The asymmetric gate allows for a unique control of the current-voltage characteristics, not only controlling the peak current but also the peak
