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Search for squarks and gluinos in final states with jets and missing transverse momentum using 36 fb-1 of √s =13 TeV pp collision data with the ATLAS detector
Searches for dijet resonances with sub-TeV masses using the ATLAS detector at the Large Hadron Collider can be statistically limited by the bandwidth available to inclusive single-jet triggers, whose data-collection rates at low transverse momentum are much lower than the rate from standard model multijet production. This Letter describes a new search for dijet resonances where this limitation is
Parameterized Yields of Semivolatile Products from Isoprene Oxidation under Different NOx Levels: Impacts of Chemical Aging and Wall-Loss of Reactive Gases
We developed a parametrizable box model to empirically derive the yields of semivolatile products from VOC oxidation using chamber measurements, while explicitly accounting for the multigenerational chemical aging processes (such as the gas-phase fragmentation and functionalization and aerosol-phase oligomerization and photolysis) under different NOx levels and the loss of particles and gases to c
Questioning liquid droplet stability on nanowire tips : from theory to experiment
Liquid droplets sitting on nanowire (NW) tips constitute the starting point of the vapor-liquid-solid method of NW growth. Shape and volume of the droplet have been linked to a variety of growth phenomena ranging from the modification of growth direction, NW orientation, crystal phase, and even polarity. In this work we focus on numerical and theoretical analysis of the stability of liquid droplet
Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. Polarity engineering provides an additional pathway to modulate the structural and optical properties of semiconductor
High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires
InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility i
Template-Assisted Scalable Nanowire Networks
Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by
Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots
Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW lon
Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires
Achieving quantum confinement by bottom-up growth of nanowires has so far been limited to the ability of obtaining stable metal droplets of radii around 10 nm or less. This is within reach for gold-assisted growth. Because of the necessity to maintain the group III droplets during growth, direct synthesis of quantum sized structures becomes much more challenging for self-assisted III-V nanowires.
Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon
Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained in high yield and uniformity. In this work, we provide understanding on the physical factors affecting size uniformity in ordered GaAs arrays g
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates : challenges and prospects for integration of III-Vs on Si
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted
Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures
In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to b
Nonstoichiometric Low-Temperature Grown GaAs Nanowires
The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitate
Improved Event Mixing for Resonance Yield Extraction
High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. In this work, we provide some of the key elements for obtaining a high yield of GaAs
Microscopic coexistence of superconductivity and magnetism in Ba(1-x)K(x)Fe2As2
It is widely believed that, in contrast to its electron-doped counterparts, the hole-doped compound Ba(1-x)K(x)Fe(2)As(2) exhibits a mesoscopic phase separation of magnetism and superconductivity in the underdoped region of the phase diagram. Here, we report a combined high-resolution x-ray powder diffraction and volume-sensitive muon spin rotation study of Ba(1-x)K(x)Fe(2)As(2) showing that this
A novel approach for applied membrane filtration on processing flows
Membrane filtration technique shows exclusively properties for optimized filtration for a given size, from micrometer to nanometer scales compared to other industrial filtration. However, there is a trade off in flux that has delayed the implementation of the membrane techniques for a wider range of applications. For a specific flow in a process stream, the limited flux through the membrane means
Osynliga pengar : Kulturella perspektiv på ett kontantlöst samhälle
I texten diskuteras vilka kulturella och sociala konsekvenser en snabb tillbakagång för kontanter till fördel för andra betalningssätt kan komma att få. Vem riskerar att lämnas utanför en snabb digital utveckling och hur förändras pengars kulturella och symboliska mening?
Performance of the EUDET-type beam telescopes
Test beam measurements at the test beam facilities of DESY have been conducted to characterise the performance of the EUDET-type beam telescopes originally developed within the EUDET project. The beam telescopes are equipped with six sensor planes using MIMOSA 26 monolithic active pixel devices. A programmable Trigger Logic Unit provides trigger logic and time stamp information on particle passage