Electron Assisted Growth of Graphene atop Ir(111) supported Hexagonal Boron Nitride
Vertical heterostructures between graphene (Gr) and hexagonal boron nitride (hBN) have attracted a great deal of interest, due to their potential applications in the semiconductor industry as new and superior transistor materials. The direct growth of the heterostucture still remains challenging and in this bachelor thesis, I report a novel electron assisted growth technique, which is used to atte
