Analysis of condition for ALD deposition of ferroelectric HZO
Deposition of ferroelectric hafnium zirconium oxide (HZO) on semiconductor samples with Atomic Layer Deposition (ALD) has proven to be a viable method of production. But while the physical processes of ALD deposition is relatively well know, there exists some gaps in knowledge about different parameters for the ALD and the resulting depositions. This work is about analysing mainly how the purge ti
