Narrow gap nanowires: From nanotechnology to RF-circuits on Si
III-V narrow band gap nanowires are considered for device applications. Nanowires are grown using the vapor-liquid-solid growth mechanism with the aim to implement high-performance devices. It is shown that high quality InAs, InSb, and GaSb nanowires, as well as their alloys, may be grown by metal organic vapor phase epitaxy. In particular, the formation of the InAs/GaSb (GaSb segment on InAs stem
