Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Vertical III-V heterostructure MOSFETs exhibit outstanding performance at reduced supply voltages. In this paper, we report on a novel process of extending high-speed device operation towards higher voltages. The device vertical geometry allows for engineering a field plate by covering the nanowire drain area with a 10-nm-thick SiO2 film. The film acts as a field moderator in the device drain regi