IMPROVED SIZE HOMOGENEITY OF INP-ON-GAINP STRANSKI-KRASTANOW ISLANDS BY GROWTH ON A THIN GAP INTERFACE LAYER
Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin similar to 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin ∼ 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, in