Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study
In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. Incorporation of bismuth (Bi