Interfaces in complex InAs-GaSb heterostructured nanowires - A transmission electron microscopy study
In this project epitaxially grown InAs-GaSb complex heterostructured nanowires have been characterized by means of aberration corrected TEM techniques and energy dispersive X-ray spectroscopy (EDX). The InAs-GaSb material is of interest due to its high charge carrier mobility, which has possible applications in electronic devices such as FETs. InAs-GaSb heterostructured nanowires in zincblende str