Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As
In this work we report results of ferromagnetic resonance studies of a 6% 15 nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane oriented magnetic field, in the temperature range between 5 K and 120 K. We observe a temperature induced reorientation of the effective in-plane easy axis from [(1) over bar 10] to [110] direction close to the Curie temper
