Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
We studied the morphology of GaP/(001)GaAs and GaAs/(001)GaP heterostructures grown by metal-organic vapour-phase epitaxy and found wire-like surface undulations elongated in the [110] direction. We attribute this elongation to anisotropic lateral growth rates in the [110] and [110] directions, which are due to a different roughness of monolayer surface steps. In III-V materials grown by molecular
