Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
Ferroelectric tunnel junctions (FTJs) based on ultrathin HfO2 have great potential as a fast and energy-efficient memory technology compatible with complementary metal oxide semiconductors. FTJs consist of a ferroelectric film sandwiched between two distinct electrodes, the properties of which are intricately linked to the electrical properties of the FTJs. Here we utilize a W crystallization elec