3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
This letter presents a vertical integration scheme where track-and-hold circuits, consisting of a MOSFET in series with a metal-insulator-metal (MIM) capacitor, are successfully fabricated along vertical InAs nanowires. The nanowire MOSFET is used as a switch with varying switch resistance, Rsw, as the gate-source voltage, VGS, is varied. The track-and-hold circuit operation is verified by a sine