8-band k · p modeling of strained InxGa(1-x)As/InP heterostructure nanowires
An 8-band k · p theory is implemented for studying the electronic properties of near-surface lateral InxGa(1-x)As/InP heterostructure nanowires in the (100) direction. The change in bandgap and effective mass due to inhomogeneous strain are compared to unstrained scenario nanowires, and the lattice mismatch is varied from -3.2% to 1%. The nanowires' height is H = 5, 13 nm, and the width varies fro