In Situ Studies of Atomic Layer Deposition of Hafnium Oxide on (Ag,Cu)(In,Ga)Se2 for Thin Film Solar Cells
Ambient pressure X-ray photoelectron spectroscopy is employed to study in real time the chemical reactions occurring on (Ag,Cu)(In,Ga)Se2 (ACIGSe) surfaces during the first atomic layer deposition (ALD) cycle of HfOx under realistic synthesis conditions by using tetrakisdimethylamido-hafnium (TDMA-Hf) and H2O precursors. We find that the initial deposition due to surface reactions of HfOx ALD on A
