Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
A vertical gate symmetrical molecular transistor is demonstrated. It includes self assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling t
