E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology
This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. The transistors used in this project are nanowire MOSFET transistors developed by the Division of Electromagnetics and Nanoelectronics, LTH, L