Diode and transistor behaviors of three-terminal ballistic junctions
We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, V-c, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: V-c approximately follows Vl linearly when Vl is negati